SI2302DS

N-channelenhancementmodefield-effecttransistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™1technology. Productavailability: SI2302DSinSOT23. 2.Features nTrenchMOS™technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applic

SI2302DS-HF

N-ChannelMOSFET

■Features ●VDS=20V ●RDS(on)=85mΩ@VGS=4.5V,ID=3.6A ●RDS(on)=115mΩ@VGS=2.5V,ID=3.1A ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

SI2302-TP

N-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •20V,3.0A,RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:S2 •Epo

SK2302AAT

SOT-523Plastic-EncapsulateMOSFETS

SK2302AAVP

N-ChannelEnhancementModeFieldEffectTransistor

SK2302AAW

SOT-323Plastic-EncapsulateMOSFETS

SK2302AVP

N-ChannelEnhancementModeFieldEffectTransistor

SK2302AW

SOT-323Plastic-EncapsulateMOSFETS

SLS2302

N-ChannelEnhancementmodeFieldEffectTransistor

SM2302NSA

N-ChannelEnhancementModeMOSFET