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RC48F4400P0X1U0中文资料PDF规格书
RC48F4400P0X1U0规格书详情
Introduction
This datasheet contains information about the Numonyx™ Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.
Product Features
High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)
产品属性
- 型号:
RC48F4400P0X1U0
- 制造商:
NUMONYX
- 制造商全称:
Numonyx B.V
- 功能描述:
StrataFlash㈢ Cellular Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MINI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
MICRON |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RealChip(正芯半导体) |
23+ |
SOP8 |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
MICRON |
BGA |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
PCD |
新 |
225 |
全新原装 货期两周 |
询价 | |||
Mini-Circuits |
20+ |
QE2249 |
100 |
专业销售MINI电子元件,常年备有大量库存 |
询价 | ||
MINI |
22+ |
9000 |
原装现货假一赔十 |
询价 | |||
MINI |
NA |
8600 |
原装正品,欢迎来电咨询! |
询价 | |||
AIRBORN |
2021+ |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
AIRBORN |
1602 |
959 |
原装正品 |
询价 |