RC4559P.A

RC4559 Dual High-Performance Operational Amplifier

1Features •Matchedgainandoffsetbetweenamplifiers •Unity-gainbandwidth:3MHztypical •Slewrate:1.5V/μstypical •Lowequivalentinputnoisevoltage2μV/Hz maximum(20Hzto20kHz) •Nofrequencycompensationrequired •Nolatchup •Widecommon-modevoltagerange •Lowpowercon

RM4559D

DualHigh-GainOperationalAmplifier

RM4559T

DualHigh-GainOperationalAmplifier

SI4559ADY

N-andP-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •CCFLInverter

SI4559ADY

N-ChanelandP-ChannelMOSFETuseadvancedtrenchTechnology

SI4559ADY

N-andP-Channel60-V(D-S)MOSFET

SI4559ADY

N-andP-Channel60-V(D-S)MOSFET

SI4559ADY

N-andP-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested •Materialcategorization:   fordefinitionsofcompliancepleasesee   www.vishay.com/doc?99912 APPLICATIONS •CCFLInverter

SI4559EY

N-Channel60-V(D-S),175째CMOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

SVINJM4559DS

BLOCKDIAGRAMOFICS

•ThisisthebasicblockdiagramoftheinsidecircuitofIC.Inan actualcircuit,theremaybesometimesidleterminalsorsomedifferent functionsotherthanthebasiccircuit