RC28F256M29EWxx数据手册Micron中文资料规格书

特性 Features

• 2Gb = stacked device (two 1Gb die)\r
• Supply voltage\r
– VCC = 2.7–3.6V (program, erase, read)\r
– VCCQ = 1.65–VCC (I/O buffers)\r
• Asynchronous random/page read\r
– Page size: 16 words or 32 bytes\r
– Page access: 25ns\r
– Random access: 100ns (Fortified BGA);\r
110ns (TSOP)\r
• Buffer program: 512-word program buffer\r
• Program time\r
– 0.88µs per byte (1.14 MB/s) TYP when using full\r
512-word buffer size in buffer program\r
• Memory organization\r
– Uniform blocks: 128-Kbytes or 64-Kwords each\r
• Program/erase controller\r
– Embedded byte (x8)/word (x16) program algorithms\r
• Program/erase suspend and resume capability\r
– Read from another block during a PROGRAM\r
SUSPEND operation\r
– Read or program another block during an ERASE\r
SUSPEND operation\r
• BLANK CHECK operation to verify an erased block\r
• Unlock bypass, block erase, chip erase, and write to\r
buffer capability\r
– Fast buffered/batch programming\r
– Fast block/chip erase\r
• VPP/WP# pin protection\r
– Protects first or last block regardless of block\r
protection settings\r
• Software protection\r
– Volatile protection\r
– Nonvolatile protection\r
– Password protection\r
– Password access\r
• Extended memory block\r
– 128-word (256-byte) block for permanent, secure\r
identification\r
– Programmed or locked at the factory or by the\r
customer\r
• Low power consumption: Standby mode\r
• JESD47-compliant\r
– 100,000 minimum ERASE cycles per block\r
– Data retention: 20 years (TYP)\r
• 65nm multilevel cell (MLC) process technology\r
• Package\r
– 56-pin TSOP, 14 x 20mm\r
– 64-ball fortified BGA, 13 x 11mm\r
• Green packages available\r
– RoHS-compliant\r
– Halogen-free\r
• Operating temperature\r
– Ambient: –40°C to +85°C\r