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RC28F128J3F75A中文资料美光数据手册PDF规格书

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厂商型号

RC28F128J3F75A

功能描述

Numonyx짰 Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

文件大小

2.20301 Mbytes

页面数量

66

生产厂商

Micron

中文名称

美光

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-11-30 11:12:00

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RC28F128J3F75A规格书详情

Introduction

This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 µs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx® Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

产品属性

  • 型号:

    RC28F128J3F75A

  • 功能描述:

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    StrataFlash™

  • 标准包装:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 异步

  • 存储容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并联

  • 电源电压:

    2.2 V ~ 3.6 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    48-VFBGA

  • 供应商设备封装:

    48-VFBGA(6x8)

  • 包装:

    带卷(TR)

供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
24+
BGA64
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
MICRON/美光
2025+
BGA
1470
原装进口价格优 请找坤融电子!
询价
MICRON/美光
25+
BGA
880000
明嘉莱只做原装正品现货
询价
MICRON
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICRON
最新
BGA
6800
全新原装公司现货低价
询价
INTEL/英特尔
23+
BGA
50000
全新原装正品现货,支持订货
询价
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
Micron
22+
64EasyBGA
9000
原厂渠道,现货配单
询价
MICRON/美光
23+/24+
BGA
9865
进口原装/原盒原标/原厂渠道
询价