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RC28F128J3F75A中文资料镁光数据手册PDF规格书

RC28F128J3F75A
厂商型号

RC28F128J3F75A

功能描述

Numonyx짰 Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

文件大小

2.20301 Mbytes

页面数量

66

生产厂商 Micron Technology
企业简称

MICRON镁光

中文名称

美国镁光科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-25 22:59:00

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RC28F128J3F75A价格和库存,欢迎联系客服免费人工找货

RC28F128J3F75A规格书详情

Introduction

This document contains information pertaining to the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 µs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx® Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

产品属性

  • 型号:

    RC28F128J3F75A

  • 功能描述:

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    StrataFlash™

  • 标准包装:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 异步

  • 存储容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并联

  • 电源电压:

    2.2 V ~ 3.6 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    48-VFBGA

  • 供应商设备封装:

    48-VFBGA(6x8)

  • 包装:

    带卷(TR)

供应商 型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
标准封装
27048
全新原装正品/价格优惠/质量保障
询价
MRON/镁光
24+
NA/
1728
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MICRON
24+
BGA64
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
MICRON/镁光
25+
BGA
996880
只做原装,欢迎来电资询
询价
MICRON
18+
BGA64
2858
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MICRON/美光
22+
BGA
6000
进口原装 假一罚十 现货
询价
MICRON/美光
22+
NA
3000
支持任何机构检测 只做原装正品
询价
MICRON
2450+
BGA
6541
只做原装正品假一赔十为客户做到零风险!!
询价
MICRON
20+
BGA
11520
特价全新原装公司现货
询价
MICREL/麦瑞
22+
INFINEON/英飞凌
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价