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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
UPG2106	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2106TB	文件：155.75 Kbytes Page：3 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@	CEL California Eastern Labs	CEL
UPG2106TB	文件：87.38 Kbytes Page：12 Pages	L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2106TB	文件：247.61 Kbytes Page：14 Pages	GaAsINTEGRATEDCIRCUITS FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
VN2106	文件：457.83 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VN2106N	文件：472.96 Kbytes Page：5 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan	SUTEX Supertex, Inc	SUTEX
VP2106	文件：636.88 Kbytes Page：5 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh	SUTEX Supertex, Inc	SUTEX
VP2106	文件：456.67 Kbytes Page：4 Pages	P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda	SUTEX Supertex, Inc	SUTEX
VP2106	文件：755.93 Kbytes Page：14 Pages	P-ChannelEnhancement-ModeVerticalDMOSFET	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
ZL2106	文件：571.97 Kbytes Page：29 Pages	6ADigital-DCSynchronousStep-DownDC/DCConverter	Intersil Intersil Corporation	Intersil

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	RC2106JR-072K4	NA	25+	原厂原封可拆样	54687	百分百原装现货实单必成	询价
艾睿国际（香港）有限公司	RC210G6	RC(锐控电子)	2447	SOP-8	315000	100个/管一级代理专营品牌!原装正品,优势现货,长期	询价
讯运(深圳/上海)电子有限公司	RC210G6	RC(锐控电子)	2021+	SOP-8	554		询价
易创佳业科技（深圳）有限公司	RC210G6	RC锐控电子	23+	SOP-8	22820	原装正品，支持实单	询价
深圳市一线半导体有限公司	RC2-10V101M	ELNA	24+		34200		询价
深圳市河锋鑫科技有限公司	RC2-10V101MF1	ELNA	2022+	DIP	92000	原厂代理终端免费提供样品	询价
深圳市明嘉莱科技有限公司	RC2-10V22M4X7	ELNA	25+	DIP	880000	明嘉莱只做原装正品现货	询价
深圳市灿芯升电子科技有限公司	RC2-10V22M4X7	ELNA	15+	DIP	100000	原装+实力库存+当天发货	询价
贸泽芯城（深圳）电子科技有限公司	RC2-10V330MD1	ELNA	23+		11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市宏捷佳电子科技有限公司	RC212-0.25-47M	Schaffner EMC Inc.	25+	垂直式 4 PC 引脚	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价

更多RC2106供应商更新时间2025-5-28 20:00:00

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