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RC1206FR-108R2L中文资料PDF规格书
RC1206FR-108R2L规格书详情
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W RF power LDMOS transistors are designed for cellular
base station applications covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA,
Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01 Probability on CCDF.
Features
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
NI--780S--2L2L, NI--780S--2L4S: R3 Suffix = 250 Units, 44 mm Tape Width,
13--inch Reel.
NI--780S--2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel options, see p. 17.