| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet | VishayVishay Siliconix 威世科技 | Vishay | ||
Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet | VishayVishay Siliconix 威世科技 | Vishay | ||
Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet | VishayVishay Siliconix 威世科技 | Vishay | ||
Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet | VishayVishay Siliconix 威世科技 | Vishay | ||
Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet | VishayVishay Siliconix 威世科技 | Vishay | ||
Lead-FreePackage,LowConductanceLoss Description TheAP1001BSQusedthelatestAPECPowerMOSFETsilicontechnologywiththeadvancedtechnologypackagingtoprovidetheloweston-resistanceloss,lowprofileanddualsidedcoolingcompatible. TheGreenFETTMpackageiscompatiblewithexistingsolderingtechniquesandisidealfor | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
BobbintronElectricalCorporation | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
CircuitModelsforPlasticPackagedMicrowaveDiodes Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
RBV1001
- 制造商：
EIC
- 制造商全称：
EIC discrete Semiconductors
- 功能描述：
SILICON BRIDGE RECTIFIERS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT |
06+ |
扁桥 |
80000 |
主营桥堆系列,真实库存 |
询价 | ||
EIC |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
SEP |
2022+ |
KBJ6 |
11188 |
只售进口原装公司现货! |
询价 | ||
SEP |
KBJ6 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
EIC |
500 |
询价 | |||||
JST/日压 |
22+ |
连接器 |
489280 |
代理-优势-原装-正品-现货*期货 |
询价 | ||
SANKEN |
1701+ |
? |
6500 |
只做原装进口,假一罚十 |
询价 | ||
SANKEN |
22+23+ |
New |
34904 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
SANKEN |
23+ |
DIP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
SANKEN |
22+ |
ZIP-4 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 |
相关规格书
更多- RBV1001D
- RBV1002D
- RBV1004
- RBV1004D
- RBV1006D
- RBV1008D
- RBV1010D
- RBV1500
- RBV15005
- RBV1500D_05
- RBV1501D
- RBV1502D
- RBV1504D
- RBV-1506
- RBV-1506S
- RBV1508D
- RBV1510
- RBV2002S
- RBV2500
- RBV25005
- RBV2500D_05
- RBV2501D
- RBV2502D
- RBV2504
- RBV2506
- RBV2506D
- RBV2508D
- RBV2510D
- RBV3500_05
- RBV3502
- RBV3506
- RBV3510
- RBV401
- RBV402
- RBV-402L
- RBV-404
- RBV404G
- RBV-406
- RBV406G
- RBV406LFB
- RBV-406M
- RBV-408
- RBV-40C
- RBV-4102
- RBV5000_05
相关库存
更多- RBV1002
- RBV1002S
- RBV-1004B
- RBV1006
- RBV1007S
- RBV1010
- RBV-1306
- RBV1500_05
- RBV1500D
- RBV1501
- RBV1502
- RBV1504
- RBV1506
- RBV1506D
- RBV1508
- RBV-150C
- RBV1510D
- RBV2233
- RBV2500_05
- RBV2500D
- RBV2501
- RBV2502
- RBV2502S
- RBV2504D
- RBV-2506
- RBV2508
- RBV2510
- RBV3500
- RBV3501
- RBV3504
- RBV3508
- RBV4005
- RBV-401
- RBV402G
- RBV404
- RBV-404B
- RBV406
- RBV-406B
- RBV-406H
- RBV406M
- RBV408
- RBV408G
- RBV410
- RBV5000
- RBV5001
