744760233A

Marking：R33；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744760233GA

Marking：R33；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744762233GA

Marking：R33；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744894300033

Marking：R33；WE-TDC SMT Shielded Coupled Inductor

GeneralProperties: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

784383360033

Marking：R33；WE-MAIA SMD Power Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referingto IR)-40°Cupto+85°C OperatingTemperature-40°Cupto+125°C StorageTemperature(inoriginal packaging)-20°Cupto+40°C

784383560033HT

Marking：R33；WE-MAIA SMT Power Inductor

GeneralProperties: AmbientTemperature(referring toIR)-55upto+110°C OperatingTemperature-55upto+150°C StorageConditions(inoriginal packaging)

784383770033HT

Marking：R33；WE-MAIA SMT Power Inductor

GeneralProperties: AmbientTemperature(referring toIRP)-55°Cupto+110°C OperatingTemperature-55°Cupto+150°C StorageConditions(inoriginal packaging)

784393440033

Marking：R33；WE-XHMA SMT Power Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

FJV3113RMTF

Marking：R33；Package：SOT-23；NPN Epitaxial Silicon Transistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=2.2kΩ,R2=47kΩ) Application •Switching,Interface,and

ULC33CDQ

Marking：R33；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 88WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoHigh-SpeedI/OLines LowClampingVoltage LowLeakageCurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(Lightning)4A(8/20μs) Applications CellPhoneHandsetsandAcce