R2J20657CNP中文资料瑞萨数据手册PDF规格书

Description

The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating

the need for an external SBD for this purpose.

Features

 Based on Intel 6  6 DrMOS Specification.

 Built-in power MOS FET suitable for Desktop, Server application.

 Low-side MOS FET with built-in SBD for lower loss and reduced ringing.

 Built-in driver circuit which matches the power MOS FET

 Built-in tri-state input function which can support a number of PWM controllers

 High-frequency operation (above 1 MHz) possible

 VIN operating-voltage range: 20 Vmax

 Large average output current (Max.40 A)

 Achieve low power dissipation

 Controllable driver: Remote on/off

 Support Mid-Voltage PWM signal to enter zero current detection

 Built-in Thermal Warning

 Built-in bootstrapping Switch

 Small package: QFN40 (6 mm  6 mm  0.95 mm)

 Terminal Pb-free/Halogen-free