R2658P

PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIERTUBES TheR2658andtheR2658Pare28mm(1-1/8inch)diametersideonphotomultipliertubesusinganewlydevelopedInGaAssemiconductorphotocathode. TheInGaAsphotocathodeissensitivefromUVtonearIRradiations(aslongasover1010nm)longerthanwavelengthlimitofGaAs

RF2658

TRANSMITMODULATOR,IFAGC,ANDUPCONVERTER

ProductDescription TheRF2658isanintegratedcompleteQuadratureModulator,IFAGCamplifier,andUpconverterdevelopedforthetransmitsectionofdual-modeCDMA/FMcellularandPCSapplicationsandforGSM/DCSandTDMAsystems. Features •SimilartoRF9958withincreasedIFrange •Supports

SW2658A

Greenenergy-savingcurrentmodePWMswitchingpowersupplycontroller

Features Built-insoftstart:4ms OptimizedHiccupModedesigntoimproveefficiencyandreducestandbypowerconsumption Noaudionoisedesignduringnormaloperation Fixedoperatingfrequency:50KHz Built-inslopecompensationcircuit Lowstartingandoperatingcurrent Built-inle

TZ2658A

HC49SMD30MHzCrystalUnit

Features: GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices

VB2658

P-Channel60-V(D-S)MOSFET

VB2658

P-Channel60-V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

VBA2658

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBA2658

P-Channel60V(D-S)175째CMOSFET

VBE2658

P-Channel60V(D-S)MOSFET

VBFB2658

P-Channel60V(D-S)MOSFET