MOSFET

DOINGTER

杜因特

P-Channel Enhancement Mode Power MOSFET

文件：315.62 Kbytes 页数：7 Pages

RECTRON

丽正国际

P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID = -4.1A RDS(ON)

文件：397.56 Kbytes 页数：7 Pages

RECTRON

丽正国际

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

文件：261.5 Kbytes 页数：7 Pages

TOSHIBA

东芝