Description

The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP,32-pin TSOP and 32-pin sTSOP.

Features

• Single 2.7~3.6V power supply

• Small stand-by current: 1µA (3.0V, typical)

• No clocks, No refresh

• All inputs and outputs are TTL compatible.

• Easy memory expansion by CS1# and CS2

• Common Data I/O

• Three-state outputs: OR-tie Capability

• OE# prevents data contention on the I/O bus

R1LV0108E属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的R1LV0108E存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。