Remote Control

Features • Multiband Radio with Full-Duplex communication • External LEDs for troubleshooting • Highly field-customizable • External removable EEPROM SIM module • STOP: PLd, Category 3 according to EN ISO 13849-1:2008 • Multi-feedback capability • 13 digital outputs

文件：279.86 Kbytes 页数：2 Pages

DANFOSS

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI

德州仪器