Operate on the main AC line 100V and 200V

Operate on the main AC line 100V and 200V

文件：1.18259 Mbytes 页数：18 Pages

Sanken

三垦

ROTA-SLIDE® Rotary Switches

Features/Benefits • Multi-pole and multi-position • Positive detent • Panel and PCB mounting • Enclosed • RoHS Compliant

文件：305.64 Kbytes 页数：3 Pages

CK-COMPONENTS

力特

R Series ROTA-SLIDE Rotary Switches

文件：527.72 Kbytes 页数：3 Pages

CK-COMPONENTS

力特

For Vacuum Ultraviolet Light Detection, Cs-I Photocathode, MgF2 Window, 28 mm (1-1/8 Inch) Diameter

文件：219.49 Kbytes 页数：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

丝印：R104G25；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G25；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G25；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G25；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G25；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G25；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器