首页 >QX817C-CUL-D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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PNPMediumpowertransistor Description TheSTX817AisaPNPtransistormanufacturedusingPlanarTechnologyresultinginruggedhighperformancedevices. Generalfeatures ■TO-92packagesuitableforthrough-holePCBassembly ■Incompliancewiththe2002/93/ECEuropeanDirective Applications ■Voltageregulation ■R | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:390MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):245MHz –Slewrate:970V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:4μV/°C(maximum) •Inputvoltagenoise: | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier 1Features •Widebandwidth: –Gain-bandwidthproduct:400MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):250MHz –Slewrate:1000V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenoi | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
SOT323NPNSILICONPLANARMEDIUMPOWERTRANSISTORS | DIODESDiodes Incorporated 美台半导体 | DIODES |
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