首页 >QX2304L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighDrivability&HighSlewRate,InputOutputFullRange, Description TheREAD2304GisinputandoutputfullrangedualCMOSOperationalAmplifierrealizinghighdrivability andhighslewrate.ThisICcanbeusedinminimumoperatingsupplyvoltagefrom2.5V,andinwideambient temperaturerangefrom-40˚Cto+105˚C. Availableinultra-small8pins | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighDrivability&HighSlewRate,InputOutputFullRange, Description TheREAD2304GisinputandoutputfullrangedualCMOSOperationalAmplifierrealizinghighdrivability andhighslewrate.ThisICcanbeusedinminimumoperatingsupplyvoltagefrom2.5V,andinwideambient temperaturerangefrom-40˚Cto+105˚C. Availableinultra-small8pins | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighDrivability&HighSlewRate,InputOutputFullRange, Description TheREAD2304GisinputandoutputfullrangedualCMOSOperationalAmplifierrealizinghighdrivability andhighslewrate.ThisICcanbeusedinminimumoperatingsupplyvoltagefrom2.5V,andinwideambient temperaturerangefrom-40˚Cto+105˚C. Availableinultra-small8pins | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
GENERALPURPOSELOW-NOISEAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
GENERALPURPOSELOW-NOISEAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
GENERALPURPOSELOW-NOISEAMPLIFIER ProductDescription TheRF2304isalow-noisesmall-signalamplifier.Thedeviceismanufacturedonalow-costGalliumArsenideMESFETprocess,andhasbeendesignedforuseasagainblockinhigh-endcommunicationsystemsoperatingfromlessthan300MHztoabove2.5GHz.With+6dBmoutputpower, | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
GENERALPURPOSELOW-NOISEAMPLIFIER ProductDescription TheRF2304isalow-noisesmall-signalamplifier.Thedeviceismanufacturedonalow-costGalliumArsenideMESFETprocess,andhasbeendesignedforuseasagainblockinhigh-endcommunicationsystemsoperatingfromlessthan300MHztoabove2.5GHz.With+6dBmoutputpower, | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
N-Channellogicenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology. FEATURES RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1301~1306 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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