光电耦合器

NQUNXIN

群芯微电子

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：464.54 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

CMOS Dual Operational Amplifier

文件：633.87 Kbytes 页数：8 Pages

RENESAS

瑞萨

HIGH ISOLATION BUFFER AMPLIFIER

Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to high

文件：198.1 Kbytes 页数：10 Pages

RFMD

威讯联合