首页 >QT3618>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
36-MbitDDR™IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitDDR™IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitDDR™IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ADAPTADORDEENCAPSULADOTSOP56ADIP56PINES Descripción EnplasIC&Burn-inSocket,paraencapsulados:TSOP56 | AGELECTRONICA AG Electronica | AGELECTRONICA | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
