首页 >QS74FCT3573Q>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCH FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusing machinemodel(C=200pF,R=0) •VCC=3.3V±0.3V,NormalRange •VCC=2.7Vto3.6V,ExtendedRange •CMOSpowerlevels(0.4μWtyp.static) •Rail-to-Railoutputswingforincreasednoisemarg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSOCTALTRANSPARENTLATCH FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusing machinemodel(C=200pF,R=0) •VCC=3.3V±0.3V,NormalRange •VCC=2.7Vto3.6V,ExtendedRange •CMOSpowerlevels(0.4μWtyp.static) •Rail-to-Railoutputswingforincreasednoisemarg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCH FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusing machinemodel(C=200pF,R=0) •VCC=3.3V±0.3V,NormalRange •VCC=2.7Vto3.6V,ExtendedRange •CMOSpowerlevels(0.4μWtyp.static) •Rail-to-Railoutputswingforincreasednoisemarg | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDT Integrated Device Technology, Inc. | IDT |
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