QPL8833SB中文资料威讯联合数据手册PDF规格书

Key Features

 Mid Gain: 15dB at 1218 MHz

 5 – 1218 MHz BW

 OIP3: +42 dBm, Downstream 50 – 1218 MHz

 OP1dB: 24 dBm, Downstream 50 – 1218 MHz

 Low Noise Figure: 4 dB, Full Band

 Excellent Composite Distortion

 pHEMT GaAs device technologies

 Compact Size: 8-pin SOIC

 Power Consumption (5 V, 280 mA, 1.4 W)