QPL8832EVB-02中文资料威讯联合数据手册PDF规格书

Key Features

• High Gain: 19dB at 1218 MHz

• 5 – 1218 MHz BW

• OIP3: +44 dBm, 50 – 1218 MHz

• OP1dB: +24 dBm, 50 – 1218 MHz

• Low Noise Figure: 3 dB, Full Band

• Excellent Composite Distortion

• pHEMT GaAs device technologies

• Compact Size: 8-pin SOIC

• Power Consumption:

5 V, 280 mA (1.4 W)

8V, 360mA (2.9W)