150 W / 300 W, 48 V, 3.4 ??3.8 GHz, Asymmetric Doherty

文件：690.85 Kbytes 页数：9 Pages

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3.4 - 3.8 GHz 48 Volt 150 / 300 Watt GaN RF Transistor

The QPD3640 is a dual-path discrete GaN on SiC HEMT which operates on LTE downlink Band 42 (3.4 - 3.6 GHz) and Band 43 (3.6 - 3.8 GHz). The device is a single-stage matched, power Doherty amplifier transistor.QPD3640 can deliver P4dB of 389 W at +50 V operation.Lead free and RoHS compliant.\nFor add • Operating Frequency Range: 3.4 - 3.8 GHz\n• Operating Drain Voltage: +48 V\n• Doherty Output Power at P4dB: 389 W 1\n• Doherty Drain Efficiency at P4dB: 57.4% 1\n• Doherty Linear Gain: 15.6 dB 1\n• 4-Lead, Earless, Ceramic NI780 Package;

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150 W / 300 W, 48 V, 3.4 ??3.8 GHz, Asymmetric Doherty

文件：690.85 Kbytes 页数：9 Pages

QORVO

威讯联合

150 W / 300 W, 48 V, 3.4 ??3.8 GHz, Asymmetric Doherty

文件：690.85 Kbytes 页数：9 Pages

QORVO

威讯联合

150 W / 300 W, 48 V, 3.4 ??3.8 GHz, Asymmetric Doherty

文件：690.85 Kbytes 页数：9 Pages

QORVO

威讯联合

150 W / 300 W, 48 V, 3.4 ??3.8 GHz, Asymmetric Doherty

文件：690.85 Kbytes 页数：9 Pages

QORVO

威讯联合

150 W / 300 W, 48 V, 3.4 ??3.8 GHz, Asymmetric Doherty

文件：690.85 Kbytes 页数：9 Pages

QORVO

威讯联合