800 um Discrete GaAs pHEMT

Product Overview The Qorvo QPD2080D is a discrete 800 micron pHEMT which operates from DC to 20 GHz. The QPD2080D is fabricated using Qorvo’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high d

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QORVO

威讯联合

DC - 20 GHz, 800 um Discrete GaAs pHEMT Die

Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 29.5 dBm\n• Typical Gain at 12 GHz: 11.5 dB\n• Typical PAE at 12 GHz: 56%\n• Typical NF at 12 GHz: 1 dB\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n• Chip Dimensions: 0.41 x 0.54 x 0.10 mm;

Qorvo

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Silicon Power Rectifier

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Microsemi

美高森美

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Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

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Microsemi

美高森美

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RFMD

威讯联合