180 um Discrete GaAs pHEMT

Key Features • Frequency: DC – 20 GHz • Output Power (P1dB)1: 22 dBm • Typical Gain1: 14 dB • Typical PAE1dB 1: 55% • Noise Figure1: 1 dB • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm

文件：938.95 Kbytes 页数：10 Pages

QORVO

威讯联合

DC - 20 GHz, 180 um Discrete GaAs pHEMT Die

Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 22 dBm\n• Typical Gain at 12 GHz: 14 dB\n• Typical PAE at 12 GHz: 55%\n• Typical NF at 12 GHz: 1 dB\n• No Vias\n• Chip Dimensions: 0.41 x 0.34 x 0.10 mm;

Qorvo

威讯联合

Variable Gain Low Noise High Linearity Amplifier

文件：495.3 Kbytes 页数：12 Pages

RFMD

威讯联合

High Temp, Single-Chip, One-Output Clock Generator

文件：914.73 Kbytes 页数：17 Pages

SITIME

赛特时脉

SiT2018B-Rev. 1.02

文件：1.120103 Mbytes 页数：16 Pages

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