0.03 - 1.215 GHz, 15 Watt, 28 V GaN RF Input-Matched Transistor

Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within th • Frequency range: 0.03 - 1.215 GHz\n• Output power (P3dB): 24 W at 1 GHz\n• Linear gain: 19 dB typical at 1 GHz\n• Typical PAE3dB: 78.2% at 1 GHz\n• Operating voltage: 28V\n• Low thermal resistance package\n• CW and pulse capable\n• 5 x 6 mm package;

Qorvo

威讯联合

8 – 11 GHz GaN Low Noise Amplifier

Product Features • Frequency Range: 8 – 11 GHz • Noise Figure: 1.7 dB • Small Signal Gain: 27 dB • Saturation Power: 15 dBm • IMD3: −24 dBc (@ Pout = 6 dBm/tone) • Bias: VD = 10 V, IDQ = 20 mA, VG = −2.5 V • Robustness: 37 dBm CW Pin. • Plastic Over-mold Package • Package Dimensi

文件：780.85 Kbytes 页数：14 Pages

QORVO

威讯联合

8 – 11 GHz GaN Low Noise Amplifier

Product Features • Frequency Range: 8 – 11 GHz • Noise Figure: 1.7 dB • Small Signal Gain: 27 dB • Saturation Power: 15 dBm • IMD3: −24 dBc (@ Pout = 6 dBm/tone) • Bias: VD = 10 V, IDQ = 20 mA, VG = −2.5 V • Robustness: 37 dBm CW Pin. • Plastic Over-mold Package • Package Dimensi

文件：780.85 Kbytes 页数：14 Pages

QORVO

威讯联合

8 – 11 GHz GaN Low Noise Amplifier

Product Features • Frequency Range: 8 – 11 GHz • Noise Figure: 1.7 dB • Small Signal Gain: 27 dB • Saturation Power: 15 dBm • IMD3: −24 dBc (@ Pout = 6 dBm/tone) • Bias: VD = 10 V, IDQ = 20 mA, VG = −2.5 V • Robustness: 37 dBm CW Pin. • Plastic Over-mold Package • Package Dimensi

文件：780.85 Kbytes 页数：14 Pages

QORVO

威讯联合