15 Watt / 30 Watt, 48 Volt, 3.4 - 3.6 GHz, Asymmetric Doherty

The QPD0009J is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0009J can deliver peak Doherty output power 50.0 W at +48V operation.Lead-free and RoHS compliant. \n • Operating Frequency Range: 3400-3600MHz\n• Output Power (PSAT): 50W\n• Linear Gain: 14 dB\n;

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Silicon N-Channel MOS FET

Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

文件：200.65 Kbytes 页数：13 Pages

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Silicon N-Channel MOS FET

Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

文件：199.29 Kbytes 页数：13 Pages

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ADSL Transformer For Centillium

文件：205.39 Kbytes 页数：2 Pages

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