X-Band 10 W GaN SPDT Switch

Key Features • SPDT • Frequency Range: 8 to 12 GHz • Input Power: 10 W • Insertion Loss: 30 dB Typical • Switching Speed: 35 ns • Control Voltages: 0 V/−28 V • Redundant Control Lines • Package Dimensions: 3 x 4.5 x 1.05 mm Performance is typical across frequency.

文件：970.1 Kbytes 页数：18 Pages

QORVO

威讯联合

400 um Discrete GaAs pHEMT

Key Features • Frequency: DC – 20 GHz • Output Power (P1dB)1: 26 dBm • Typical Gain1: 13 dB • Typical PAE1dB 1: 55% • Noise Figure1: 1.1 dB • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm

文件：1.04218 Mbytes 页数：10 Pages

QORVO

威讯联合

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

文件：112.14 Kbytes 页数：3 Pages

Microsemi

美高森美

Silicon Power Rectifier

文件：143.29 Kbytes 页数：2 Pages

Microsemi

美高森美