5 – 6 GHz 60 W GaN Power Amplifier

Qorvo’s QPA2308D is a MMIC power amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Operating from 5.0 – 6.0 GHz, the QPA2308D produces greater than 60 W of saturated output power and greater than 21 dB of large-signal gain while achieving greater than 43% power-adde • Frequency Range: 5.0 – 6.0 GHz\n• PAE (PIN = 26 dBm): 43 %\n• Small Signal Gain: 31 dB\n• Die Dimensions: 4.272 x 5.070 x 0.10 mm\n;

Qorvo

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2308 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

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RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2308 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合

N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =3A RDS(ON)

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RECTRON

丽正国际