7.9 – 11.0 GHz 25 W GaN Power Amplifier

Product Features  Frequency Range: 7.9 – 11 GHz  POUT (PIN = 25 dBm): 44.5 dBm  PAE (PIN = 25 dBm): 40  Power Gain (PIN = 25 dBm): 19.5 dB  IM3 ((POUT/Tone = 38 dBm): -20 dBc  Small Signal Gain: 28 dB  Integrated Power Detector  Bias: VD = 24 V, IDQ = 1200 mA, VG = −1.9 V

文件：1.34681 Mbytes 页数：27 Pages

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威讯联合

30 ??1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

文件：1.45565 Mbytes 页数：25 Pages

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30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

Key Features • Frequency: 30 to 1200 MHz • Output Power (P3dB)1: 8.7 W • Linear Gain1: 21 dB • Typical PAE3dB 1: 60 • Operating Voltage: 50 V • CW and Pulse capable

文件：1.57951 Mbytes 页数：23 Pages

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威讯联合

30 ??1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

文件：1.45565 Mbytes 页数：25 Pages

TRIQUINT