10.7 ??12.7 GHz 17.5 Watt GaN Amplifier

文件：663.76 Kbytes 页数：17 Pages

QORVO

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10.7 ??12.7 GHz 17.5 Watt GaN Amplifier

文件：663.76 Kbytes 页数：17 Pages

QORVO

威讯联合

10.7 - 12.7 GHz 17.5 Watt GaN Amplifier

Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency.\nThe QPA1 • Frequency Range: 10.7 - 12.7 GHz\n• PSAT (PIN=27 dBm): > 43.5 dBm\n• PAE (PIN=27 dBm): > 40 %\n• Power Gain (PIN=27 dBm): > 17 dB\n• Small Signal Gain: > 22 dB\n• Bias: VD = 20 V, IDQ = 600 mA\n• Die Dimensions: 3.16 x 4.24 x 0.10 mm;

Qorvo

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15W, 50V, DC ??4 GHz, GaN RF Transistor

文件：1.54768 Mbytes 页数：28 Pages

QORVO

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15W, 50V, DC – 4 GHz, GaN RF Transistor

Product Features • Frequency: DC to 4 GHz • Output Power (P3dB): 17 W at 2 GHz • Linear Gain: 24 dB at 2 GHz • Typical PAE3dB: 72 at 2 GHz • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable • 3 x 3 mm package

文件：1.65846 Mbytes 页数：29 Pages

QORVO

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2.5V Reference

文件：125.05 Kbytes 页数：2 Pages

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