1 – 8 GHz 10 W GaN Power Amplifier

Product Features • Frequency Range: 1 – 8 GHz • POUT: 40 dBm (PIN = 15 dBm) • PAE: 30 (PIN = 15 dBm) • Large Signal Gain: 25 dB (PIN = 15 dBm) • Small Signal Gain: 30 dB • Bias: VD = +28 V, IDQ = 650 mA • Package Dimensions: 5.0 x 6.0 x 1.76 mm • Process Technology: QGaN15

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QORVO

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1 ??8 GHz 10 W GaN Power Amplifier

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TRIQUINT

1 – 8 GHz 10 W GaN Power Amplifier

Product Features • Frequency Range: 1 – 8 GHz • POUT: 40 dBm (PIN = 15 dBm) • PAE: 30 (PIN = 15 dBm) • Large Signal Gain: 25 dB (PIN = 15 dBm) • Small Signal Gain: 30 dB • Bias: VD = +28 V, IDQ = 650 mA • Package Dimensions: 5.0 x 6.0 x 1.76 mm • Process Technology: QGaN15

文件：620.34 Kbytes 页数：20 Pages

QORVO

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1 - 8 GHz, 10 Watt GaN Power Amplifier

Qorvo's QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003P operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combinatio • Frequency Range: 1 - 8GHz\n• PSAT: 40dBm • PAE: 30 %\n• Small Signal Gain: 30dB\n• Return Loss: 11dB\n• Bias: VD = 28V, IDQ = 650mA, VG = −2.2V Typical\n• Package Dimensions: 5 x 6 x 1.76 mm;

Qorvo

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