| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
QN3115M3N | N-Channel 30V Fast Switching MOSFET The QN3115M3N is a high performance trench N-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support synchronous buck converter applications. \n\n The QN3115M3N meets RoHS and Green Product requirements while • Advanced high cell density Trench technology\n• Super Low Gate Charge\n• Green Device Available; | uPI(UBIQ) 力智电子 | uPI(UBIQ) | |
QN3115M3N | N-Channel 30V Fast Switching MOSFET 文件:596.51 Kbytes 页数:8 Pages | UPI 力智电子 | UPI | |
SOT23-5 | ON 上传:深圳广友电子有限公司 | ON | ||
SOT23-5 | QNHCHIP/乾能惠 上传:深圳广友电子有限公司 | QNHCHIP/乾能惠 | ||
SOT23 | QNHCHIP/乾能惠 上传:深圳广友电子有限公司 | QNHCHIP/乾能惠 |
技术参数
- Package Type:
PRPAK3*3
- Configuration:
Single
- MOSFET Type:
N
- VDS (V):
30
- VGS (V):
±20
- Vth max. (V):
2.5
- RDS(ON) (mΩ)max. at VGS10V:
4.9
- RDS(ON) (mΩ)max. at VGS4.5V:
7.3
- Ciss (pF):
863
- Coss (pF):
292
- Crss (pF):
24
- Qg(nC):
14.8
- Qgs(nC):
2.7
- Qgd(nC):
2.3
- ID (A) Tc=25℃:
59
- ID (A) Tc=100℃:
37
- ID (A) TA=25℃:
14
- ID (A) TA=70℃:
11
- EAS.max(mj):
58.5
- PD(W) Tc=25℃:
27
- PD (W) TA=25℃:
1.6
- ESD Diode:
NO
- Schottky Diode:
NO
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN3333-8 |
986966 |
国产 |
询价 | ||
台湾力智 |
2447 |
PRPAK3*3 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON |
23+ |
SOT23-5 |
13800 |
原装现货 |
询价 | ||
ON |
23+ |
SOT23-5 |
12000 |
原装现货 |
询价 | ||
UPI |
22+ |
SMD |
24000 |
询价 |
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