首页 >QMV818AJS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TheHighlycompetitivespeakerwithscreen Features CPU Quad-coreARMCortexTM-A53@1.5GHz 32KBL1I-cache+32KBL1D-cachepercore,512KBL2cache Low-powerCoolFlex™powermanagementarchitecture GPU IMGPowerVRGE8300 SupportOpenGLES3.2，Vulkan1.1，OpenCL1.2 Memory DDR3/DDR3L/DDR4/LPDDR3/LPDDR4,32-bitwidth,support4 | AllwinnerAllwinner Technology Co.,Ltd. 全志科技珠海全志科技股份有限公司 | Allwinner | ||
Inputrange:3.8V-6VforUSBinput2.7V-4.5VforBATinput Feature Inputrange:3.8V-6VforUSBinput2.7V-4.5VforBATinput SwitchmodeLi-ionbatterychargerprovidingchargingcurrentupto3A. Powerpathcontrollerwith5Acurrentpath. Accuratebatteryfuelgauge. RealtimeclockRTC Lowstandbycurrentoflessthan40uA(at32 | ROCKCHIPRockchip Electronics Co., Ltd 瑞芯微瑞芯微电子有限公司 | ROCKCHIP | ||
RackStationRS818/RS818RP Highlights •Quad-core4-bayNASwithAES-NI support,withover1,099MB/sreading and401MB/swritingperformance •PCIeslotforoptional10GbEadd-in networkinterfacecard •Four1GbE(RJ-45)portswithfailover andLinkAggregationsupport •2GBDDR3memory,expandableupto 16GB • | SYNOLOGYSynology Inc. 群晖科技 | SYNOLOGY | ||
LOWDROPOUTCMOSVOLTAGEREGULATOR LOWDROPOUTCMOSVOLTAGEREGULATOR TheS-818SeriesisapositivevoltageregulatordevelopedbyCMOStechnologyandfeaturedbylowdropoutvoltage,highoutputvoltageaccuracyandlowcurrentconsumption. Built-inlowon-resistancetransistorprovideslowdropoutvoltageandlargeoutputcurr | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 | SII | ||
LOWDROPOUTCMOSVOLTAGEREGULATOR LOWDROPOUTCMOSVOLTAGEREGULATOR TheS-818SeriesisapositivevoltageregulatordevelopedbyCMOStechnologyandfeaturedbylowdropoutvoltage,highoutputvoltageaccuracyandlowcurrentconsumption. Built-inlowon-resistancetransistorprovideslowdropoutvoltageandlargeoutputcurr | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 | SII | ||
LOWDROPOUTCMOSVOLTAGEREGULATOR | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 | SII | ||
LOWDROPOUTCMOSVOLTAGEREGULATOR | ABLICABLIC Inc. 艾普凌科艾普凌科有限公司 | ABLIC | ||
SAB5.0THRUSAB28SERIES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
30V,2.0ARectifier 30V,2.0ARectifier Features •Compositetypedevicewith2lowIRSBDshousedinonepackage,facilitatinghighdensitymounting •Smallswitchingnoise •Lowforwardvoltage(IF=2.0A,VFmax=0.62V) •Lowreversecurrent(VR=15V,IRmax=7.5μA) •Ultrasmallpackagepermittingappliedsetsto | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SchottkyBarrierDiode Features •Compositetypedevicewith2lowIRSBDshousedinonepackage,facilitatinghighdensitymounting •Smallswitchingnoise •Lowforwardvoltage(IF=2.0A,VFmax=0.62V) •Lowreversecurrent(VR=15V,IRmax=7.5μA) •Ultrasmallpackagepermittingappliedsetstobesmallandslim(M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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