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R818

TheHighlycompetitivespeakerwithscreen

Features CPU Quad-coreARMCortexTM-A53@1.5GHz 32KBL1I-cache+32KBL1D-cachepercore,512KBL2cache Low-powerCoolFlex™powermanagementarchitecture GPU IMGPowerVRGE8300 SupportOpenGLES3.2,Vulkan1.1,OpenCL1.2 Memory DDR3/DDR3L/DDR4/LPDDR3/LPDDR4,32-bitwidth,support4

AllwinnerAllwinner Technology Co.,Ltd.

全志科技珠海全志科技股份有限公司

RK818

Inputrange:3.8V-6VforUSBinput2.7V-4.5VforBATinput

Feature Inputrange:3.8V-6VforUSBinput2.7V-4.5VforBATinput SwitchmodeLi-ionbatterychargerprovidingchargingcurrentupto3A. Powerpathcontrollerwith5Acurrentpath. Accuratebatteryfuelgauge. RealtimeclockRTC Lowstandbycurrentoflessthan40uA(at32

ROCKCHIPRockchip Electronics Co., Ltd

瑞芯微瑞芯微电子有限公司

RS818PLUS

RackStationRS818/RS818RP

Highlights •Quad-core4-bayNASwithAES-NI support,withover1,099MB/sreading and401MB/swritingperformance •PCIeslotforoptional10GbEadd-in networkinterfacecard •Four1GbE(RJ-45)portswithfailover andLinkAggregationsupport •2GBDDR3memory,expandableupto 16GB •

SYNOLOGYSynology Inc.

群晖科技

S818

LOWDROPOUTCMOSVOLTAGEREGULATOR

LOWDROPOUTCMOSVOLTAGEREGULATOR TheS-818SeriesisapositivevoltageregulatordevelopedbyCMOStechnologyandfeaturedbylowdropoutvoltage,highoutputvoltageaccuracyandlowcurrentconsumption. Built-inlowon-resistancetransistorprovideslowdropoutvoltageandlargeoutputcurr

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S-818

LOWDROPOUTCMOSVOLTAGEREGULATOR

LOWDROPOUTCMOSVOLTAGEREGULATOR TheS-818SeriesisapositivevoltageregulatordevelopedbyCMOStechnologyandfeaturedbylowdropoutvoltage,highoutputvoltageaccuracyandlowcurrentconsumption. Built-inlowon-resistancetransistorprovideslowdropoutvoltageandlargeoutputcurr

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S-818

LOWDROPOUTCMOSVOLTAGEREGULATOR

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S-818

LOWDROPOUTCMOSVOLTAGEREGULATOR

ABLICABLIC Inc.

艾普凌科艾普凌科有限公司

SA818

SAB5.0THRUSAB28SERIES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SBE818

30V,2.0ARectifier

30V,2.0ARectifier Features •Compositetypedevicewith2lowIRSBDshousedinonepackage,facilitatinghighdensitymounting •Smallswitchingnoise •Lowforwardvoltage(IF=2.0A,VFmax=0.62V) •Lowreversecurrent(VR=15V,IRmax=7.5μA) •Ultrasmallpackagepermittingappliedsetsto

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SBE818

SchottkyBarrierDiode

Features •Compositetypedevicewith2lowIRSBDshousedinonepackage,facilitatinghighdensitymounting •Smallswitchingnoise •Lowforwardvoltage(IF=2.0A,VFmax=0.62V) •Lowreversecurrent(VR=15V,IRmax=7.5μA) •Ultrasmallpackagepermittingappliedsetstobesmallandslim(M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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