P-Channel 60V Fast Switching MOSFET

The QM6015S is a high performance trench P-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support synchronous buck converter applications. \n\n The QM6015S meets RoHS and Green Product requirements while supp • Advanced high cell density Trench technology\n• Super Low Gate Charge\n• Excellent CdV/dt effect decline\n• Green Device Available;

uPI(UBIQ)

力智电子

P-Channel 60-V (D-S) MOSFET

文件：1.59967 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

10V Drive Nch MOSFET

Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching

文件：328.88 Kbytes 页数：6 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.24 Kbytes 页数：2 Pages

ISC

无锡固电

10V Drive Nch MOSFET

1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant

文件：235.33 Kbytes 页数：6 Pages

ROHM

罗姆