QPA2040D

20–40GHz2WattGaNPowerAmplifier

KeyFeatures •FrequencyRange:20–40GHz •PSAT(PIN=21dBm):33.5dBm •PAE(PIN=21dBm):13 •PowerGain(PIN=21dBm):12.5dB •SmallSignalGain:24.3dB •Bias:VD=18V,IDQ=462mA •DieDimensions:2.692x1.882x0.050mm Performanceistypicalacrossfrequency.Please refe

QPB2040N

18–40GHz100WKa-BandGaNAmplifier

ProductFeatures •FrequencyRange:18–40GHz •SaturatedOutputPower:50.0dBm(PIN=39dBm) •LargeSignalGain:11.0dB(PIN=39dBm) •SolidStateMMICReliability •Multi-ElementRedundancy •InstantOn(nowarm-up) •IntegratedBiasCard Performanceistypicalacrossfrequency.

QPC2040

X-Band10WGaNSPDTSwitch

KeyFeatures •SPDT •FrequencyRange:8to12GHz •InputPower:10W •InsertionLoss:30dBTypical •SwitchingSpeed:35ns •ControlVoltages:0V/−28V •RedundantControlLines •PackageDimensions:3x4.5x1.05mm Performanceistypicalacrossfrequency.

QPC2040SR

X-Band10WGaNSPDTSwitch

KeyFeatures •SPDT •FrequencyRange:8to12GHz •InputPower:10W •InsertionLoss:30dBTypical •SwitchingSpeed:35ns •ControlVoltages:0V/−28V •RedundantControlLines •PackageDimensions:3x4.5x1.05mm Performanceistypicalacrossfrequency.

QPD2040D

400umDiscreteGaAspHEMT

KeyFeatures •Frequency:DC–20GHz •OutputPower(P1dB)1:26dBm •TypicalGain1:13dB •TypicalPAE1dB 1:55% •NoiseFigure1:1.1dB •NoVias •Technology:0.25umGaAspHEMT •ChipDimensions:0.41x0.34x0.10mm

R2040

SiliconPowerRectifier

SiliconPowerRectifier ●GlassPassivatedDie ●LowForwardVoltage ●200ASurgeRating ●Glasstometalconstruction ●VRRMto1200V ●Excellentreliability

R2040

SiliconPowerRectifier

RF2040E

915.0MHzSAWFilter

RF2040E

915.0MHzSAWFilter

RP2040

AnRP2040-basedmicrocontrollerboard

keyfeatures: •RP2040microcontrollerwith2MBFlash •Micro-USBBportforpoweranddata(andforreprogrammingtheFlash) •40pin21×51'DIP'style1mmthickPCBwith0.1through-holepinsalsowithedgecastellations ◦Exposes26multi-function3.3VGeneralPurposeI/O(GPIO) ◦23GPIO