零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,3.2A,RDS(ON)=2.8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UBIQ |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
UBIQ |
22+ |
TO-220 |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
UBIQ |
22+ |
TO-220 |
10000 |
原装现货,假一赔十 |
询价 | ||
UBIQ |
23+ |
NA/ |
250 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
UBIQ/力智 |
21+ |
TO251-3L |
6688 |
十年老店,原装正品 |
询价 | ||
UBIQ |
21+ |
原厂封装 |
46826 |
询价 | |||
UBIQ |
TO251 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
询价 | |||
UBIQ |
2052+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
CMOS/场效应半导体 |
TO-251 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
UBIQ |
22+ |
100000 |
代理渠道/只做原装/可含税 |
询价 |
相关规格书
更多- QM10HB-2H
- QM300HA-2H
- QMV104DT5
- QMV155B
- QMV177CT5
- QMV190AT5
- QMV190BT5
- QMV233AT5
- QMV258AT5
- QMV298FT5
- QMV351CY1
- QMV365BT5
- QMV403AT5
- QMV417FH5
- QMV432BT5
- QMV469AT5
- QMV475ET5
- QMV491BT5
- QMV495AT5
- QMV585CT5
- QMV630-1AF5
- QMV636BT5
- QMV650AT5
- QMV71BD1
- QMV71DP5
- QMV755AT5
- QMV81AD1
- QMV900AH5
- QMV913AH5
- QMV97AP5
- QS3125
- QS3125S1
- QS316211PA
- QS32390Q
- QS3244SO
- QS3245SO
- QS3251S1
- QS3253S1
- QS3257Q
- QS3257S1
- QS32X384Q1
- QS32XL384Q1
- QS3383SO
- QS3384QX
- QS3389Q
相关库存
更多- QM262D1
- QM50DY-H
- QMV113AD1
- QMV16BW1
- QMV179AT5
- QMV190BQ1
- QMV221CP5
- QMV234AT5
- QMV262AT5
- QMV300FT5
- QMV362AH5
- QMV391AT5
- QMV416AT5
- QMV418GT5
- QMV453AT5
- QMV474DT5
- QMV480AT5
- QMV493CT5
- QMV554ET5
- QMV628AT5
- QMV635AT5
- QMV647AH5
- QMV650BT5
- QMV71CD1
- QMV74AD1
- QMV818AH5
- QMV863BT5
- QMV902BH5
- QMV964AT5
- QS013
- QS3125Q
- QS3126Q
- QS32384Q
- QS3244Q
- QS3245Q
- QS3251Q
- QS3253Q
- QS3257
- QS3257QX
- QS32X245Q2
- QS32X861Q1
- QS3383Q
- QS3384Q
- QS3384SO
- QS3390Q