N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：609.99 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.20164 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 100V Fast Switching MOSFET

The QM0016S is a high performance trench N-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support synchronous buck converter applications. \n\n The QM0016S meets RoHS and Green Product requirements while sup • Advanced high cell density Trench technology\n• Super Low Gate Charge\n• Excellent CdV/dt effect decline\n• Green Device Available;

uPI(UBIQ)

力智电子

13.75 – 14.5 GHz 15 Watt GaN Power Amplifier

Product Overview Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion pr

文件：1.61323 Mbytes 页数：33 Pages

QORVO

威讯联合

13.75 – 14.5 GHz 15 Watt GaN Power Amplifier

Product Overview Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion pr

文件：1.61323 Mbytes 页数：33 Pages

QORVO

威讯联合

Diagnostic Modes for QT ICs

文件：75.72 Kbytes 页数：4 Pages

Atmel

爱特梅尔