首页 >QEDB-8512>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

RCLAMP8512N

LowCapacitanceRClamp®SurgeProtectionforLVDSInterfaces

Features Transientprotectionforhigh-speeddatalinesto IEC61000-4-2(ESD)±25kV(air),±18kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)15A(8/20μs) ArrayofsurgerateddiodeswithinternalTVSDiode Flow-Throughrouting Smallpackagesavesboardspac

SEMTECHSemtech Corporation

升特

RCLAMP8512N.TGT

LowCapacitanceRClamp®SurgeProtectionforLVDSInterfaces

Features Transientprotectionforhigh-speeddatalinesto IEC61000-4-2(ESD)±25kV(air),±18kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)15A(8/20μs) ArrayofsurgerateddiodeswithinternalTVSDiode Flow-Throughrouting Smallpackagesavesboardspac

SEMTECHSemtech Corporation

升特

SI8512-B-GM

UNIDIRECTIONALACCURRENTSENSORS

SILABS

Silicon Laboratories

SI8512-B-GM

Si85XXUNIDIRECTIONALACCURRENTSENSORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

SI8512-C-GM

Si85XXUNIDIRECTIONALACCURRENTSENSORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

SI8512-C-IM

Si85XXUNIDIRECTIONALACCURRENTSENSORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

SI8512-C-IS

Si85XXUNIDIRECTIONALACCURRENTSENSORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

TDA8512

26WBTLand2x13WSEor4x13WSEpoweramplifier

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TDA8512J

26WBTLand2x13WSEor4x13WSEpoweramplifier

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TPCP8512

BipolarTransistorsSiliconNPNEpitaxialType

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=400to1000(VCE=2V,IC=0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=0.21V(max)(IC=1.6A,IB=32mA) (3)High-speedswitching:tf=120ns(typ.)(IC=1.6A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

供应商型号品牌批号封装库存备注价格