首页 >QBVP2014R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10/100/1000/2.5GBASE?밫MAGNETICSMODULES | BOTHHAND Bothhand USA | BOTHHAND | ||
DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
3phiRoundWideViewingAngleLEDs 3φRoundWideViewingAngleLEDs | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
ShieldedPowerInductor??SER2000 | COILCRAFTCoilcraft lnc. 线艺美国线艺公司 | COILCRAFT | ||
HighEnergyNPNTransistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI Solid States Devices, Inc | SSDI | ||
200AMP100-140VOLTSNPNTRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI Solid States Devices, Inc | SSDI |
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