丝印：QA；Package：PG-WHTFN-9；MOSFET OptiMOS™ 5 Power‑Transistor, 60 V

Features • N‑channel, logic level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：857.21 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：QA；Package：SOT23；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：297.97 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：QA；Package：TO-236AB；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: NHDTA114ET 10 10 NHDTC114ET NHDTA124ET 22 22 NHDTC124ET N

文件：298.01 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：QA；Package：SOT-346；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC (max) = 800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN2401~RN2406

文件：322.45 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：QA；Package：WSON(DSE)；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1• Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA • 2% Accuracy Over Load, Line, Temperature • Ultralow IQ: 7.9 μA • Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip• Available in

文件：669.54 Kbytes 页数：36 Pages

TI

德州仪器

丝印：QA；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1• Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA • 2% Accuracy Over Load, Line, Temperature • Ultralow IQ: 7.9 μA • Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip• Available in

文件：662.61 Kbytes 页数：36 Pages

TI

德州仪器

丝印：QA；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1• Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA • 2% Accuracy Over Load, Line, Temperature • Ultralow IQ: 7.9 μA • Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip• Available in

文件：662.61 Kbytes 页数：36 Pages

TI

德州仪器

丝印：QA；Package：WSON(DSE)；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1• Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA • 2% Accuracy Over Load, Line, Temperature • Ultralow IQ: 7.9 μA • Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip• Available in

文件：669.54 Kbytes 页数：36 Pages

TI

德州仪器

丝印：QA；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1• Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA • 2% Accuracy Over Load, Line, Temperature • Ultralow IQ: 7.9 μA • Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip• Available in

文件：662.61 Kbytes 页数：36 Pages

TI

德州仪器

丝印：QA；Package：WSON；TPS727 250-mA, Ultralow IQ, Fast Transient Response, RF Low-Dropout Linear Regulator

1 Features 1• Very Low Dropout: – 65 mV Typical at 100 mA – 130 mV Typical at 200 mA – 163 mV Typical at 250 mA • 2% Accuracy Over Load, Line, Temperature • Ultralow IQ: 7.9 μA • Excellent Load Transient Performance:±50 mV for 200 mA Loading and Unloading Transient chip• Available in

文件：662.61 Kbytes 页数：36 Pages

TI

德州仪器