Q67100-Q2010中文资料西门子数据手册PDF规格书

1M x 32-Bit Dynamic RAM Module (2M x 16-Bit Dynamic RAM Module)

The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board.

Advanced Information

• 1 048 576 words by 32-bit organization

(alternative 2 097 152 words by 16-bit)

• Fast access and cycle time

60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

• Fast page mode capability with

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

• Single + 5 V (± 10 ) supply

• Low power dissipation

max. 4840 mW active (-60 version)

max. 4400 mW active (-70 version)

CMOS – 44 mW standby

TTL – 88 mW standby

• CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh

• 8 decoupling capacitors mounted on substrate

• All inputs, outputs and clock fully TTL compatible

• 72 pin Single in-Line Memory Module

• Utilizes eight 1M × 4-DRAMs in 300 mil SOJ packages

• 1024 refresh cycles /16 ms

• Tin-Lead contact pads (S - version)

• Gold contact pads (GS - version)

• single sided module with 25.4 mm (1000 mil) height