Q67100-Q2004中文资料西门子数据手册PDF规格书

1M × 72-Bit Dynamic RAM Module (ECC - Module)

The HYM 721000GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 514400BT 1M × 4 DRAMs in 300 mil wide TSOPII - packages mounted together with eighteen 0.2 µF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers.

Advanced Information

• 1 048 576 words by 72-bit ECC - mode organization

• Fast access and cycle time

60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

• Fast page mode capability with

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

• Single + 5 V (± 10 ) supply

• Low power dissipation

max. 10890 mW active (-60 version)

max. 9900 mW active (-70 version)

CMOS – 451 mW standby

TTL – 550 mW standby

• CAS-before-RAS refresh, RAS-only-refresh

• 18 decoupling capacitors mounted on substrate

• All inputs, outputs and clock fully TTL compatible

• 4 Byte interleave enabled, Dual Address inputs (A0/B0)

• Buffered inputs excepts RAS and DQ

• 168 pin, dual read-out, Single in-Line Memory Module

• Utilizes eighteen 1M × 4 -DRAMs in TSOPII-packages and four BiCMOS 8-bit buffers/line drivers 74ABT244

• Two versions: HYM 721000GS with TSOPII-components (4.06 mm module thickness)

HYM 721010GS with SOJ-components (8.89 mm module thickness)

• 1024 refresh cycles / 16 ms

• Gold contact pad

• double sided module with 25.35 mm (1000 mil) height