丝印：Q5606；Package：DFN5060B-8L；30V Complementary Enhancement Mode MOSFET

Features  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : DFN5060B-8L Package 

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