丝印：Q3；Package：X1SON；ESD501 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • IEC 61000-4-5 surge protection: – 3A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low leakage current: 1nA (typical) • Industry standard 0402 package 2 Applications • Automotive Ante

文件：1.16331 Mbytes 页数：15 Pages

TI

德州仪器

丝印：Q3；Package：SC-70；Low capacitance bidirectional dual line ESD protection diode

1. General description ESD protection device in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, designed to protect two lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 2. Features and benefits • Reverse stand-off voltage: VRWM = 27 V

文件：213.82 Kbytes 页数：11 Pages

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丝印：Q3；Package：SOT23；Automotive infotainment ESD protection diode

1. General description Automotive ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients. This product protects es

文件：270.67 Kbytes 页数：12 Pages

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丝印：Q3；Package：SOT23；ESD protection diode

1. General description ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two high-speed data lines from the damage caused by ElectroStatic discharge (ESD) and other transients. This product protects especially multimedia applicati

文件：211.68 Kbytes 页数：11 Pages

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丝印：Q3；Package：DFN1006BD-2；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：296.87 Kbytes 页数：13 Pages

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安世

丝印：Q3；Package：XDFN8；Precision Very Low Dropout Voltage Regulator

文件：621.26 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：Q365；Package：SOT-23；TLV365-Q1 Automotive, 50-MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifier

1 Features • AEC-Q100 qualified – Temperature grade 1: –40°C to +125°C • Gain bandwidth: 50 MHz • Zerø-crossover distortion topology: – CMRR: 115 dB (typical) – Rail-to-rail input and output • Input 100 mV beyond supply rail • Noise: 4.5 nV/√Hz • Slew rate: 27 V/μs • Fast settling: 0.2 μ

文件：2.11069 Mbytes 页数：31 Pages

TI

德州仪器

丝印：Q365；Package：SOT-23；TLVx365-Q1 Automotive, 50MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifiers

1 Features • AEC-Q100 qualified – Temperature grade 1: –40°C to +125°C • Gain bandwidth: 50MHz • Zero-crossover distortion topology: – CMRR: 115dB (typical) – Rail-to-rail input and output • Input 100mV beyond supply rail • Noise: 4.5nV/√Hz • Slew rate: 27V/μs • Fast settling: 0.2μs to 0

文件：2.34154 Mbytes 页数：35 Pages

TI

德州仪器

丝印：Q365；Package：SOT-23；TLVx365-Q1 Automotive, 50MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifiers

1 Features • AEC-Q100 qualified – Temperature grade 1: –40°C to +125°C • Gain bandwidth: 50MHz • Zero-crossover distortion topology: – CMRR: 115dB (typical) – Rail-to-rail input and output • Input 100mV beyond supply rail • Noise: 4.5nV/√Hz • Slew rate: 27V/μs • Fast settling: 0.2μs to 0

文件：2.41794 Mbytes 页数：38 Pages

TI

德州仪器

丝印：Q372M；Package：SOIC；LinCMOS DUAL DIFFERENTIAL COMPARATORS

文件：1.58393 Mbytes 页数：29 Pages

TI

德州仪器