| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFET | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFET DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-ChannelPowerMOSFETs,30A,150V/200V N-ChannelPowerMOSFETs,30A,150V/200V PowerAndDiscreteDivision | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
VGSRatedat짹20V | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/543 DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RepetitiveAvalancheRatings | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.085ohm,Id=30A) 200Volt,0.085ΩHEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantagesofM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/543 DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/543 DESCRIPTION Thisfamilyof2N6764,2N6766,2N6768and2N6770switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinathruholeTO-254AAleadedpackage.Microsemialsooffersnumerousothertransistorproductsto | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.085ohm,Id=30A) 200Volt,0.085ΩHEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantagesofM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
原厂封装 |
9896 |
询价 | |||
IR |
22+ |
TO-3 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-3 |
8000 |
只做原装现货 |
询价 | ||
ST/意法 |
TO-92 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
ST |
23+ |
TO-92 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
22+ |
TO-92 |
10000 |
正规渠道,只有原装! |
询价 | ||
ST |
TO-92 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
TO-92 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
VB |
2019 |
TO-92 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
UBIQ |
24+25+/26+27+ |
TO-92-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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