首页 >PZU36B1A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mWareideallysuitedforstabilizedpowersupply,etc. •Widespectrumfrom1.6Vthrough38Vofzenervoltageprovideflexibleapplication. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarZenerDiodesforStabilizer Features •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. •Thesediodesaredeliveredtaped. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
SingleZenerdiodesinaSOD323Fpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
360V-20A-DualDiodeUltraFastRecoveryDiode Features •Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) •Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) •Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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