PZU11B3A-Q

Single Zener diodes; • Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W\n• Total power dissipation: Ptot ≤ 320 mW\n• Tolerance series:• B: approximately ±5 %\n• B1, B2, B3: approximately ±2 %\n\n• Wide working voltage range: nominal 2.4 V to 36 V (E24 range)\n• Low reverse current IR range\n• Small plastic package suitable for surface-mounted design\n• PZU5.1BA-Q - 10BA-Q: Very low dynamic impedances at low currents, very low leakage current, hard breakdown knee\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package.\n

H11B3

PHOTODARLINGTONOPTOCOUPLERS

DESCRIPTION TheCNX48U,H11BX,MOC8080andTIL113haveagalliumarsenideinfraredemitteropticallycoupledtoasiliconplanarphotodarlington. FEATURES •Highsensitivitytolowinputdrivecurrent •MeetsorexceedsallJEDECRegisteredSpecifications •VDE0884approvalavail

H11B3

PHOTODARLINGTONOPTOCOUPLERS

H11B3

6-PinDIPOptoisolatorsDarlingtonOutput(LowInputCurrent)

TheH11B1andH11B3devicesconsistofagalliumarsenideinfraredemittingdiodeopticallycoupledtoamonolithicsiliconphotodarlingtondetector.Theyaredesignedforuseinapplicationsrequiringhighoutputcurrent(IC)atlowLEDinputcurrents(IF). •HighSensitivitytoLowInputDrive

RKZ11B3KD

SiliconPlanarZenerDiodeforStabilizedPowerSupply

Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mW. •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •LLDPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.