H11B3隔离器的光隔离器-晶体管光电输出规格书PDF中文资料

The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF).

• High Sensitivity to Low Input Drive Current (IF = 1 mA)

• To order devices that are tested and marked per VDE 0884 requirements, the

suffix ”V” must be included at end of part number. VDE 0884 is a test option.

Applications

• Appliances, Measuring Instruments

• I/O Interfaces for Computers

• Programmable Controllers

• Interfacing and coupling systems of different potentials and impedances

• Solid State Relays

• Portable Electronics